History
Julius Edgar Lilienfeld, who is a physicist and electronic engineer was attributed with the first patents on the field-effect transistor (FET) in 1925. Due to his failure to publish articles in learned journals and high-purity semiconductor materials were not available during his time, his FET patent never gain fame. But because of his quest to find a solid-state replacement for the thermionic triode that are consuming large volume of power and space that has contributed to the basic concept of controlling the flow of current in a semiconductor to form an amplifying device. Metal-Oxide Silicon (MOS) transistors, which was built around field-effect principles, today still dominate semiconductor electronics even after around 100 years.
US1745175A – Method and apparatus for controlling electric currents US1900018A – Device for controlling electric current
1956: A p-channel Si MOSFET was prepared by M. M. Atalla and Dawon Kahng and was presented in 1960 Solid State Device Research Conference
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1958: Two transistors were used in first integrated circuit Flip-flop. Built by Jack Kilby at Texas Instruments
April 25, 1961: Robert Noyce was awarded with first patent for an integrated circuit.
1963: Reduced power by MOS transistors in CMOS (Complementary MOS) concept, first reported by Wanlass and Sah of Fairchild
1969: First successful PMOS silicon gate transistor technology was developed by Intel. A traditional silicon dioxide (SiO2) gate dielectric still used in these transistors, but introduce new polysilicon gate electrodes.
1971: Intel first microprocessor named 4004 was launched. It was 1/8 inch by 1/16 inch that contained 2250 transistors and was manufactured with Intel’s 10 mm PMOS technology on 2-inch wafers.
1985: The Intel386™ microprocessor was released, included 275,000 transistors which is 100 times more than the original 4004. It is a 32-bit multitasking chip which could run multiple programs at the same time and was originally manufactured using 1.5 mm CMOS technology.
Aug. 13, 2002: Numerous technology advancement was disclosed by Intel in its upcoming 90 nm process technology, including lower-power, higher-performance transistors, strained silicon, high-speed copper interconnects and a new low-k dielectric material. Implementing strained silicon in production was the first process in the industry.
2003: Intel Pentium 4 microprocessor with 55 million transistors and 512 Mbit DRAM (> 0.5 billion transistors)
Jan. 29, 2007: Breakthrough transistor materials was reveal by Intel such as high-k and metal gate, that it will use to build the insulating wall and switching gate on the next generation Intel® Core™ 2 Duo, Intel Core 2 Quad and Xeon® families of multi-core processors – codenamed Penryn with hundreds of millions of microscopic 45 nm transistors build inside.
